An High Performance Ka-band MMIC Fourth Harmonic Image Rejection Diode Mixer
An High Performance Ka-band MMIC Fourth Harmonic Image Rejection Diode Mixer
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DOI：
10.1163/156939308787543903
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发表时间：
2008-01
影响因子：
1.3
通讯作者：
Y. Xu;Y. Guo;R. Xu;B. Yan;Y. Wu
中科院分区：
文献类型：
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作者：
Y. Xu;Y. Guo;R. Xu;B. Yan;Y. Wu
采用商用联合单片半导体(UMS)工艺设计了一种高性能的Ka波段MMIC四次谐波镜像抑制二极管混频器。给出了详细的设计方法和仿真结果。结果表明，在本振(LO)驱动功率为13dBm时，该混频器在34~38 GHz频段内的转换损耗小于15.2dBm，镜像抑制比(IRR)大于20db，中频带宽可达3 GHz。
An high performance Ka-band MMIC fourth harmonic image rejection diode mixer is designed using commercial United Monolithic Semiconductors (UMS) process in this paper. Details of design approach and outcome of simulations are presented. The results show that this mixer has a conversion loss less than 15.2 dB and image rejection ratio (IRR) more than 20 dB in the 34–38 GHz with a wide band IF range up to 3 GHz, for a local oscillating (LO) drive power level of 13 dBm.