Oxygen Diffusion in Pure and Doped ZnO
Oxygen Diffusion in Pure and Doped ZnO
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DOI：
10.1590/s1516-14392003000200011
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发表时间：
2003-06
影响因子：
1.7
通讯作者：
A. Sabioni;Marcelo José Ferreira Ramos;W. B. Ferraz
中科院分区：
文献类型：
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作者：
A. Sabioni;Marcelo José Ferreira Ramos;W. B. Ferraz
O扩散分布由二次离子质谱法测定。实验结果表明，在相同的实验条件下，Li掺杂ZnO中的氧扩散与纯ZnO中的氧扩散相似，而Al掺杂ZnO中的氧扩散比纯ZnO中的氧扩散增强。基于这些结果，提出了一个间隙机制的氧在ZnO中的扩散。此外，还发现氧的晶界扩散是一个复杂的过程。3至4个数量级以上的纯的和掺杂的ZnO中的氧体积扩散，这意味着晶界是一个快速的路径，氧扩散在ZnO中。
O diffusion profiles were determined by secondary ion mass spectrometry. The results of the experiments show that oxygen diffusion in Li-doped ZnO is similar to the oxygen diffusion in pure ZnO, while in Al-doped ZnO the oxygen diffusion is enhanced in relation to that observed in pure ZnO, in the same experimental conditions. Based on these results is proposed an interstitial mechanism for oxygen diffusion in ZnO. Moreover, it was found that oxygen grain-boundary diffusion is ca. 3 to 4 orders of magnitude greater than oxygen volume diffusion in pure and doped ZnO, which means that the grain-boundary is a fast path for oxygen diffusion in ZnO.