GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth
GaN-Based Vertical Cavities with All Dielectric Reflectors by Epitaxial Lateral Overgrowth
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DOI：
10.7567/jjap.52.08jh03
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发表时间：
2013-05
影响因子：
1.5
通讯作者：
S. Okur;R. Shimada;Fan Zhang;S. Hafiz;Jaesoong Lee;V. Avrutin;H. Morkoç;A. Franke;F. Bertram;J. Christen;Ü. Özgür
中科院分区：
文献类型：
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作者：
S. Okur;R. Shimada;Fan Zhang;S. Hafiz;Jaesoong Lee;V. Avrutin;H. Morkoç;A. Franke;F. Bertram;J. Christen;Ü. Özgür
在光注入条件下，研究了c面蓝宝石上具有全介质顶部和底部分布布拉格反射器（DBRs）的GaN基垂直腔，并与在独立GaN上具有AlN/GaN底部和介质顶部分布布拉格反射器的GaN基垂直腔进行了比较。介绍了一种采用两个外延横向过生长步骤的新型制造方法，该方法在不需要去除蓝宝石衬底的情况下在底部介电dbr上产生空腔。在高光激发下，所有介质dbr的腔体质量因子高达1400，受激发射阈值密度（5µJ/cm2）比在独立GaN上使用顶部介质dbr但使用半导体AlN/GaN底部dbr的腔体低一个数量级。这种新颖的方法有望导致注入垂直腔激光器具有自然形成的几乎无缺陷的活性区域和电流限制，没有任何氧化步骤。
GaN-based vertical cavities with all dielectric top and bottom distributed Bragg reflectors (DBRs) on c-plane sapphire were investigated under optical injection and compared with those having AlN/GaN bottom and dielectric top DBRs on freestanding GaN. A novel fabrication method employing two epitaxial lateral overgrowth steps is introduced to produce a cavity on bottom dielectric DBRs without the need to remove the sapphire substrate. Under high optical excitation, the cavity with all dielectric DBRs exhibited quality factors up to 1400 and an order of magnitude lower stimulated emission threshold density (5 µJ/cm2) than those employing top dielectric DBRs but semiconductor AlN/GaN bottom DBRs on freestanding GaN. This novel approach is expected to lead to injection vertical cavity lasers with naturally formed nearly defect-free active regions and current confinement without any oxidation steps.