1200 V SiC BJTs with Low VCESAT and High Temperature Capability
1200 V SiC BJTs with Low VCESAT and High Temperature Capability
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具有低 VCESAT 和高温能力的 1200 V SiC BJT
DOI：
10.4028/www.scientific.net/msf.679-680.686
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
Mats Reimark
中科院分区：
文献类型：
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作者：
M. Domeij;A. Lindgren;C. Zaring;A. Konstantinov;Krister Gumaelius;Hakan Grenell;Imre Keri;J. O. Svedberg;Mats Reimark
制造了额定电压为 1200 V 的垂直外延 NPN SiC BJT。在 IC=6 A (JC=140 A/cm2) 和 T=25 °C 时测得非常低的集电极-发射极饱和电压 VCESAT=0.5 V，在 IC=6 A 和 T=250 °C 时测得 VCESAT=1.0 V。 IC=6 A 时的共发射极电流增益在 T=25 °C 时分别为 71，在 T=250 °C 时为 32。为 BJT 开发了 SPICE 模型，包括内部 pn 结的寄生电容，以及电流增益和集电极串联电阻的温度依赖性。 BJT 的 IC-VCE 特性与 25 °C 至 250 °C 之间的 SPICE 模型非常吻合。快速开关测量显示 VCE 电压下降时间为 22 ns，VCE 电压上升时间为 11 ns。
Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages VCESAT=0.5 V at IC=6 A (JC=140 A/cm2) and T=25 °C and VCESAT=1.0 V at IC=6 A and T=250 °C were measured. The common emitter current gain at IC=6 A is 71 at T=25 °C and 32 at T=250 °C, respectively. A SPICE model was developed for the BJT including the parasitic capacitances of the internal pn junctions, as well as temperature dependence of the current gain and the collector series resistance. The IC-VCE characteristics of the BJT are in good agreement with the SPICE model between 25 °C and 250 °C. Fast switching measurements were performed showing a VCE voltage fall-time of 22 ns and a VCE voltage rise-time of 11 ns.