Formation of vanadium-based ohmic contacts to n-GaN
Formation of vanadium-based ohmic contacts to n-GaN
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DOI：
10.1063/1.1598284
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发表时间：
2003-08
影响因子：
4
通讯作者：
June O. Song;S. -. Kim;J. Kwak;T. Seong
中科院分区：
文献类型：
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作者：
June O. Song;S. -. Kim;J. Kwak;T. Seong
我们研究了n-GaN（Nd=2.0×1018 cm−3）上钒（V）基欧姆接触作为退火温度的函数。结果表明，在650和850 °C退火后，V（60 nm）接触变为欧姆接触，接触电阻率为10−3-10−4 Ω cm 2。V（20 nm）/Ti（60 nm）/Au（20 nm）接触在650和850 °C下退火时产生非常低的比接触电阻，分别为2.2×10−5和4.0×10−6 Ω cm 2。比较表明，采用Ti/Au覆盖层对改善欧姆特性是非常有效的。基于俄歇电子能谱和掠射角X射线衍射的结果，可能的解释退火温度依赖性的V基接触的欧姆行为进行了描述和讨论。
We investigate vanadium (V)-based ohmic contacts on n-GaN (Nd=2.0×1018 cm−3) as a function of annealing temperature. It is shown that the V (60 nm) contacts become ohmic with specific contact resistances of 10−3–10−4 Ω cm2 upon annealing at 650 and 850 °C. The V (20 nm)/Ti (60 nm)/Au (20 nm) contacts produce very low specific contact resistances of 2.2×10−5 and 4.0×10−6 Ω cm2 when annealed at 650 and 850 °C, respectively. A comparison shows that the use of the overlayers (Ti/Au) is very effective in improving ohmic property. Based on Auger electron spectroscopy and glancing-angle x-ray diffraction results, possible explanations for the annealing temperature dependence of the ohmic behavior of the V-based contacts are described and discussed.