High-Quality ZnO Layers Grown by CVD on Sapphire Substrates with an AlN Nucleation Layer
High-Quality ZnO Layers Grown by CVD on Sapphire Substrates with an AlN Nucleation Layer
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DOI：
10.1021/acs.cgd.0c00242
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发表时间：
2020-05
影响因子：
3.8
通讯作者：
R. Müller;Florian Huber;Matthias Töws;Martin Mangold;M. Madel;Jan-Patrick Scholz;A. Minkow;U. Herr;K. Thonke
中科院分区：
文献类型：
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作者：
R. Müller;Florian Huber;Matthias Töws;Martin Mangold;M. Madel;Jan-Patrick Scholz;A. Minkow;U. Herr;K. Thonke
采用甲烷(CH4)基化学气相沉积(CVD)法，以氮化铝(AlN)为衬底，在蓝宝石衬底上生长了单晶高质量氧化锌(ZnO)薄膜.
The growth of single-crystalline high-quality zinc oxide (ZnO) layers by a methane (CH4)-based chemical vapor deposition (CVD) growth process on sapphire substrates with an aluminum nitride (AlN) n...