Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations
Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial silicon deposition. I. Process considerations
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通过低剂量氩离子轰击清洁硅表面以进行低温（750°C）外延硅沉积 I. 工艺注意事项。
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
R. Reif
中科院分区：
文献类型：
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作者：
J. Comfort;L. Garverick;R. Reif
低能量氩溅射工艺已经过优化，可以在高温下成功去除硅表面的原生氧化物，而不会造成永久性损伤。该工艺依赖于将所有溅射事件限制在硅的近表面区域，并利用在600 °C以上观察到的硅和二氧化硅的溅射效率的增强。该过程已经被实施为在高真空环境中用于低温（低于800 °C）、极低压（1-10 mTorr）、外延硅沉积的原位蚀刻。所采用的反应器和条件沿着与作为处理条件的函数的残余衬底损伤的措施，并讨论了工艺限制。配套文件描述了所得外延膜的优异结构质量。所采用的离子能量（100 eV）和通量（5×1013 cm−2 s−1）代表了与传统溅射清洁工艺的显著不同。
A low‐energy argon sputter process has been optimized to successfully remove native oxide from a silicon surface at elevated temperatures without introducing permanent damage. The process relies upon confining all sputtering events to the near‐surface region of the silicon and exploits the enhancement of sputter efficiencies observed for silicon and silicon dioxide above 600 °C. The procedure has been implemented as an in situ etch for low‐temperature (below 800 °C), very low‐pressure (1–10 mTorr), epitaxial silicon deposition in a high vacuum ambient. The reactor and conditions employed are presented along with measures of residual substrate damage as a function of processing conditions, and the process limitations are discussed. A companion paper describes the excellent structural quality of the resultant epitaxial films. The ion energies (100 eV) and fluxes (5×1013 cm−2 s−1) employed represent a significant departure from conventional sputter cleaning processes.