Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO2 blocking layer.
Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO2 blocking layer.
复制标题
氧空位减少的HfO2阻挡层改善Au纳米晶体存储器的电荷存储特性
DOI：
10.1186/1556-276x-8-368
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发表时间：
2013-08-28
影响因子：
--
通讯作者：
Kang J
中科院分区：
文献类型：
--
作者：
Tang R;Huang K;Lai H;Li C;Wu Z;Kang J
研究了金属/HfO2/Au纳米晶（NC）/SiO2/Si的电荷存储特性，并通过在400 ° C氧气环境中退火HfO2阻挡层，显著提高了存储性能和保持时间。实验证据表明，潜在的机制可以有效地应用于减少氧空位和抑制不必要的电子陷阱辅助隧穿。还示出了在± 2 V的施加扫描电压下的1 V的存储器窗口。低的编程/擦除电压（± 2 V）和良好的保持性能表明了NC在低压非易失性存储器件中的潜在应用。
This study characterizes the charge storage characteristics of metal/HfO2/Au nanocrystals (NCs)/SiO2/Si and significantly improves memory performance and retention time by annealing the HfO2 blocking layer in O2 ambient at 400°C. Experimental evidence shows that the underlying mechanism can be effectively applied to reduce oxygen vacancy and suppress unwanted electron trap-assisted tunneling. A memory window of 1 V at an applied sweeping voltage of ±2 V is also shown. The low program/erase voltage (±2 V) and the promising retention performances indicate the potential application of NCs in low-voltage, non-volatile memory devices.