Evidence of Enlarged Drift Length in Nanocrystalline Porous Silicon Layers by Time-of-Flight Measurements
Evidence of Enlarged Drift Length in Nanocrystalline Porous Silicon Layers by Time-of-Flight Measurements
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通过飞行时间测量证明纳米晶多孔硅层漂移长度增大
DOI：
10.1143/jjap.40.2779
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发表时间：
2001
影响因子：
1.5
通讯作者：
N. Koshida
中科院分区：
文献类型：
--
作者：
A. Kojima;N. Koshida
利用飞行时间（TOF）测量方法研究了纳米晶多孔硅（PS）自支撑层的电子输运机制。所观察到的TOF瞬态光电流曲线与单晶硅（c-Si）和非晶硅（a-Si）的TOF瞬态光电流曲线不同。由飞行时间测量得到的迁移率-寿命乘积（μτ）表明，PS的电子漂移长度在100 K时增加到3.8 μm，在300 K时增加到2.6 μm.
The electron transport mechanism of nanocrystalline porous silicon (PS) has been studied for a self-supporting PS layer by a time-of-flight (TOF) measurement. The observed TOF transient photocurrent curves are different from those of both single crystalline silicon (c-Si) and amorphous silicon (a-Si). On the basis of the mobility-lifetime product (µτ) deduced from TOF measurements, it is shown that the electron drift length of PS is enhanced up to 3.8 µm at 100 K and 2.6 µm at 300 K.