Thin film polycrystalline silicon solar cells on mullite ceramics
Thin film polycrystalline silicon solar cells on mullite ceramics
复制标题
DOI：
10.1016/j.renene.2007.05.038
复制
发表时间：
2008-02
期刊：
影响因子：
8.7
通讯作者：
A. Focsa;I. Gordon;J. Auger;A. Slaoui;G. Beaucarne;J. Poortmans;C. Maurice
中科院分区：
文献类型：
--
作者：
A. Focsa;I. Gordon;J. Auger;A. Slaoui;G. Beaucarne;J. Poortmans;C. Maurice
在这项工作中，我们提出了由高温化学气相沉积（CVD）莫来石陶瓷上涂有旋涂可流动的氧化物（FOx）作为中间层（ILs）的多晶硅薄膜的结构质量。用光学显微镜观察了平均晶粒尺寸和粒度分布。研究发现，在掺硼FOx上生长的多晶硅薄膜表面65%以上被5-10μm的大颗粒覆盖。用电子背散射衍射（EBSD）技术分析了晶粒内缺陷和晶粒取向。在这些硅层中经常出现孪晶型缺陷，如Al 2 O3和Al 2 O 9，它们略微（110）优先取向。最后，我们提出了测试太阳能电池上的这些CVD多晶硅薄膜的光伏数据。据报道，效率约为3.3%。的限制因素，以及可能的改进，进行了讨论。
In this work, we present the structural quality of polycrystalline silicon films formed by high-temperature chemical vapor deposition (CVD) on mullite ceramics coated with spin-on flowable oxides (FOx) serving as intermediate layers (ILs). The average grain size and the size distribution were investigated by optical microscopy. It is found that more than 65% of the surface of polysilicon films grown on boron-doped FOxis covered by large grains of 5–10μm. The intra-grain and inner-grain defects as well as the grain orientation were analyzed with the electron backscattering diffraction (EBSD) technique. Twin-type defects such as Σ3 and Σ9 are frequently present in these silicon layers, which are slightly (110) preferentially oriented. Finally, we present the photovoltaic data on test solar cells made on these CVD polysilicon films. An efficiency of about 3.3% is reported. The limiting factors, as well as possible improvements, are discussed.