Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures
Carrier dynamics in InAs quantum dots embedded in InGaAs/GaAs multi quantum well structures
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DOI：
10.1088/1742-6596/61/1/036
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发表时间：
2007-03
期刊：
影响因子：
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通讯作者：
J. L. C. Espinola;M. Dybic;S. Ostapenko;T. Torchynska;G. Polupan
中科院分区：
文献类型：
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作者：
J. L. C. Espinola;M. Dybic;S. Ostapenko;T. Torchynska;G. Polupan
研究了镶嵌在对称的InxGa 1-xAs/GaAs（x = 0.15）量子威尔斯阱（DWELL）中的InAs量子点的基态和多激发态光致发光及其温度依赖性。利用我们求解的激子动力学（弛豫成量子阱或量子点和热逃逸）速率方程组的解，分析了InAs量子点基态和多激发态光致发光热猝灭的热激活能的变化。用所得解讨论了InAs量子点的PL热猝灭激活能的变化。它揭示了三种不同的制度的热激活淬火的量子点PL强度。这三个区域归因于激子的热逃逸：i）从InAs量子点的高能量激发态进入WL并伴随激子再定位; ii）从InxGa 1-xAs量子阱进入GaAs势垒; iii）从WL进入GaAs势垒并随后在GaAs势垒中非辐射复合。
Ground and multi excited state photoluminescence, as well as its temperature dependence, in InAs quantum dots embedded in symmetric InxGa1-xAs/GaAs (x = 0.15) quantum wells (DWELL) have been investigated. The solution of the set of rate equations for exciton dynamics (relaxation into QWs or QDs and thermal escape) solved by us earlier is used for analysis the variety of thermal activation energies of photoluminescence thermal quenching for ground and multi excited states of InAs QDs. The obtained solutions were used at the discussion of the variety of activation energies of PL thermal quenching in InAs QDs. It is revealed three different regimes of thermally activated quenching of the QD PL intensity. These three regimes were attributed to thermal escape of excitons: i) from the high energy excited states of InAs QDs into the WL with follows exciton re-localization; ii) from the InxGa1-xAs QWs into the GaAs barrier and iii) from the WL into the GaAs barrier with their subsequent nonradiative recombination in GaAs barrier.