Reactive intercalation and oxidation at the buried graphene-germanium interface
Reactive intercalation and oxidation at the buried graphene-germanium interface
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DOI：
10.1063/1.5098351
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发表时间：
2019-07-01
期刊：
影响因子：
6.1
通讯作者：
Hofmann, Stephan
中科院分区：
文献类型：
--
作者：
Braeuninger-Weimer, Philipp;Burton, Oliver;Hofmann, Stephan
我们探索了一些不同的电化学，湿化学和气相方法来研究嵌入和氧化在埋石墨烯-锗界面。虽然以前的文献集中在Ge表面的化学气相沉积石墨烯的钝化，我们表明，特别是通过在0.25 N的无水乙酸钠在冰醋酸溶液中的电化学插层，这种钝化可以克服生长GeO2下石墨烯。角分辨光电子能谱、拉曼光谱、He离子显微镜和飞行时间二次离子质谱表明，单层石墨烯保持未受损，其固有应变通过界面氧化释放。石墨烯作为生长的锗氧化物的保护层，我们将讨论如何将这些见解用于新的加工方法。
We explore a number of different electrochemical, wet chemical, and gas phase approaches to study intercalation and oxidation at the buried graphene-Ge interface. While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid, this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy, and time-of-flight secondary ion mass spectrometry show that the monolayer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the as-grown Ge oxide, and we discuss how these insights can be utilized for new processing approaches.