Electrochemical fabrication of CdS nanowire arrays in porous anodic aluminum oxide templates
Electrochemical fabrication of CdS nanowire arrays in porous anodic aluminum oxide templates
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DOI：
10.1021/jp952910m
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发表时间：
1996-08-15
影响因子：
--
通讯作者：
Xu, JM
中科院分区：
文献类型：
--
作者：
Routkevitch, D;Bigioni, T;Xu, JM
本发明描述了一种用于制造长度可达1 μ m、直径可小至9 nm的均匀CdS纳米线阵列的技术，该技术通过从含有Cd 2+和S的二甲基亚砜的电解液中将半导体直接电化学沉积到阳极氧化铝膜的孔中来实现。用X射线粉末衍射（XRD）和电子显微镜对纳米线阵列进行了表征。沉积的材料被发现是六方晶系的CdS与晶体学的c-轴优先取向沿着孔的长度。通过XRD和共振拉曼光谱研究了退火对沉积半导体结晶度的影响。沉积技术原则上可概括为制造宽范围半导体的纳米线的手段。
A technique is described for fabricating arrays of uniform CdS nanowires with lengths up to 1 mu m and diameters as small as 9 nm by electrochemically depositing the semiconductor directly into the pores of anodic aluminum oxide films from an electrolyte containing Cd2+ and S in dimethyl sulfoxide. The nanowire arrays were characterized by powder X-ray diffraction (XRD) and electron microscopy. The deposited material is found to be hexagonal CdS with the crystallographic c-axis preferentially oriented along the length of the pore. The effects of annealing on the crystallinity of the deposited semiconductor were investigated by XRD and resonance Raman spectroscopy. The deposition technique is, in principle, generalizable as a means of fabricating nanowires of a wide range of semiconductors.