A ruggedly packaged D-Band GaAs Gunn diode with hot electron injection suitable for volume manufacture
A ruggedly packaged D-Band GaAs Gunn diode with hot electron injection suitable for volume manufacture
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坚固封装的 D 波段 GaAs 耿氏二极管，具有热电子注入功能，适合批量生产
DOI：
10.1109/mwsym.2008.4633158
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
M. Missous
中科院分区：
文献类型：
--
作者：
N. Farrington;P. Norton;M. Carr;J. Sly;M. Missous
基于一种新型的阶跃梯度AlxGa(1−x)As发射装置，利用热电子注入技术制备了适用于125GHz次谐波模式的GaAs Gunn二极管。测试是在封装在坚固的密封封装后进行的，测试过程与汽车工业设备的批量生产过程类似。在121.5GHz的二次谐波模式下获得了高达40mW的射频功率电平，效率为1.45%，平均频率漂移为0.5MHz/°C。与文献中报道的大多数依赖金刚石散热器的最先进的未封装设备不同，这些封装设备包含一个集成的黄金散热器，因此提供更低的单位成本，提高了可制造性，并且易于集成到现实世界的系统中。
GaAs Gunn diodes optimized for use in second harmonic mode at 125GHz have been fabricated with hot electron injection based on a novel step-graded AlxGa(1−x)As launcher. Testing was performed after encapsulation in rugged, hermetically sealed packages using a similar process to that performed for volume manufacture of devices for the automotive industry. RF power levels up to 40mW at 121.5GHz in second harmonic mode have been obtained with an efficiency of 1.45% and an average frequency drift of 0.5MHz/°C. Unlike the majority of state-of-the-art unpackaged devices reported in the literature which rely on diamond heatsinking, these packaged devices incorporate an integral gold heatsink, and so offer lower unit cost, increased manufacturability, and ease of integration into real-world systems.