Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate
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DOI：
10.1109/jlt.2018.2811388
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发表时间：
2018-07-01
影响因子：
4.7
通讯作者：
Chen, Baile
中科院分区：
文献类型：
--
作者：
Chen, Wei;Deng, Zhuo;Chen, Baile
在本文中，我们展示了第一个在硅衬底上单片生长的InAs/InGaAs/GaAs量子点阱（DWELL）光电探测器。我们研究了DWELL光电探测器的光学和电学特性。从DWELL光电探测器测量的时间分辨光致发光光谱显示了1.52 ns的长载流子寿命。在77 K下，在1V偏压下获得了2.03 × 10 ~（-3）mA/cm ~ 2的低暗电流密度。在77 K、2 V偏压下，该器件在6.4 μ m波长处的峰值响应率为10.9mA/W，相应的探测率为5.78 × 10（8）cm·Hz（1/2）/W。这些结果表明，这些硅基DWELL光电探测器是非常有前途的未来中红外应用，这可以享受潜在的好处，从中红外硅光子技术。
In this paper, we have demonstrated the first InAs/InGaAs/GaAs quantum dots-in-a-well (DWELL) photodetector monolithically grown on silicon substrate. We studied both the optical and electrical characteristics of the DWELL photodetectors. Time-resolved photoluminescence spectra measured from the DWELL photodetector revealed a long carrier lifetime of 1.52 ns. A low dark current density of 2.03 x 10(-3) mA/cm(2) was achieved under 1 V bias at 77 K. The device showed a peak responsivity of 10.9 mA/W under 2 V bias at the wavelength of 6.4 mu m at 77K, and the corresponding detectivity was 5.78 x 10(8) cm.Hz(1/2)/W. These results demonstrated that these silicon-based DWELL photodetectors are very promising for future mid-infrared applications, which can enjoy the potential benefit from mid-infrared silicon photonics technology.