Defect Chemistry and Plasmon Physics of Colloidal Metal Oxide Nanocrystals
Defect Chemistry and Plasmon Physics of Colloidal Metal Oxide Nanocrystals
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DOI：
10.1021/jz500440e
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发表时间：
2014-05-01
影响因子：
5.7
通讯作者：
Milliron, Delia J.
中科院分区：
文献类型：
--
作者：
Lounis, Sebastien D.;Runnerstrom, Evan L.;Milliron, Delia J.
高掺杂金属氧化物等离子体纳米晶在过去的十年中得到了迅速的发展，代表了一类具有独特光电性能的材料。在这一视角下，我们讨论了金属氧化物中的掺杂机制以及伴随而来的自由载流子散射物理，这两者都对决定这些纳米晶体中局域表面等离子体共振(LSPR)的性质有重要意义。掺杂的激活和补偿之间的平衡限制了最常见的金属氧化物的自由载流子浓度，从而限制了LSPR频率。此外，由于掺杂离子对振荡等离子体的电离杂质散射，半导体金属氧化物材料的散射必须以与传统金属完全不同的方式来处理。虽然这些效应在块状金属氧化物中是众所周知的，但还需要进一步的研究来了解它们在纳米晶体中的表现以及对等离子体性质的相应影响，并开发出超越当前自由载流子浓度限制的材料。
Plasmonic nanocrystals of highly doped metal oxides have seen rapid development in the past decade and represent a class of materials with unique optoelectronic properties. In this Perspective, we discuss doping mechanisms in metal oxides and the accompanying physics of free carrier scattering, both of which have implications in determining the properties of localized surface plasmon resonances (LSPRs) in these nanocrystals. The balance between activation and compensation of dopants limits the free carrier concentration of the most common metal oxides, placing a ceiling on the LSPR frequency. Furthermore, because of ionized impurity scattering of the oscillating plasma by dopant ions, scattering must be treated in a fundamentally different way in semiconductor metal oxide materials when compared with conventional metals. Though these effects are well-understood in bulk metal oxides, further study is needed to understand their manifestation in nanocrystals and corresponding impact on plasmonic properties, and to develop materials that surpass current limitations in free carrier concentration.