Epitaxial growth of chalcopyrite CuInS2 films on GaP(001) by controlling [Cu]/[In] ratio
Epitaxial growth of chalcopyrite CuInS2 films on GaP(001) by controlling [Cu]/[In] ratio
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DOI：
10.1002/pssc.200881163
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发表时间：
2009-05
期刊：
影响因子：
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通讯作者：
R. Vequizo;Nozomu Tsuboi;Satoshi Kobayashi;K. Oishi;F. Kaneko
中科院分区：
文献类型：
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作者：
R. Vequizo;Nozomu Tsuboi;Satoshi Kobayashi;K. Oishi;F. Kaneko
研究了不同[Cu]/[In]比的CuInS2薄膜在GaP（001）衬底上570°C外延生长的结构和发光特性。在几乎化学计量的薄膜中，CuIn5S8相以Cu-Au有序CuInS2为主，而富cu薄膜中CuInS2以Cu-Au有序CuInS2为主。在略富Cu薄膜中，CuInS2的黄铜矿有序性非常明显，在1.28≤[Cu]/[in]≤1.41的窄范围内。这些微富cu薄膜呈现出与c轴取向黄铜矿结构相对应的条纹反射高能电子衍射图，没有观察到其他取向结构，表明CuInS2外延薄膜的结构质量很高。薄膜在带边区有较宽的发射带。（©2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
Epitaxial growth of CuInS2 films with various [Cu]/[In] ratios at 570 °C on GaP (001) substrates is presented with structural and luminescent investigations. CuIn5S8 phase with Cu-Au ordered CuInS2 dominate in almost stoichiometric films while Cu-Au ordering of CuInS2 was observed in Cu-rich films. Chalcopyrite ordering of CuInS2 was highly evident in the slightly Cu-rich films at a narrow range of 1.28 ≤ [Cu]/[In] ≤ 1.41. These slightly Cu-rich films exhibited streaky reflection high energy electron diffraction patterns corresponding to the c-axis oriented chalcopyrite structure without the other oriented structures were observed, indicating highly structural quality of CuInS2 epitaxial films. Broad emission bands in the band-edge region were observed in the films. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)