Low temperature formation of SiO2∕Si structure by nitric acid vapor
Low temperature formation of SiO2∕Si structure by nitric acid vapor
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DOI：
10.1063/1.2395601
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发表时间：
2006-12
影响因子：
3.2
通讯作者：
K. Imamura;O. Maida;K. Hattori;Masao Takahashi;H. Kobayashi
中科院分区：
文献类型：
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作者：
K. Imamura;O. Maida;K. Hattori;Masao Takahashi;H. Kobayashi
Si可以在350至500°C的温度下通过使用硝酸（HNO 3）蒸气氧化，产生5- 10 nm的SiO2 scinSi结构。氧化动力学遵循抛物线规律，表明氧化物质的扩散（即，HNO 3分子分解产生的氧原子）通过SiO2的反应是速率决定步骤。在350°C下形成的SiO2层的漏电流密度遵循Poole-Frenkel机制，表明SiO2带隙中存在陷阱态，陷阱能估计为SiO2导带以下0.57eV。另一方面，在500°C下形成的SiO2层的漏电流密度遵循Fowler-Nordheim机制，显示不存在陷阱态。
Si can be oxidized at temperatures between 350 and 500°C by use of nitric acid (HNO3) vapor, resulting in 5–10nm SiO2∕Si structure. The oxidation kinetics follows a parabolic law, indicating that diffusion of oxidizing species (i.e., oxygen atoms generated by decomposition of HNO3 molecules) through SiO2 is the rate-determining step. The leakage current density flowing through the SiO2 layer formed at 350°C follows the Poole-Frenkel mechanism, indicating the presence of trap states in the SiO2 band gap, and the trap energy is estimated to be 0.57eV below the SiO2 conduction band. On the other hand, the leakage current density for the SiO2 layer formed at 500°C follows the Fowler-Nordheim mechanism, showing the absence of trap states.