Increased pattern transfer fidelity of ZEP 520A during reactive ion etching through chemical modifications by additional dosing of the electron beam resist
Increased pattern transfer fidelity of ZEP 520A during reactive ion etching through chemical modifications by additional dosing of the electron beam resist
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DOI：
10.1116/1.3562272
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发表时间：
2011-03-01
影响因子：
1.4
通讯作者：
Ocola, Leonidas E.
中科院分区：
文献类型：
--
作者：
Czaplewski, David A.;Ocola, Leonidas E.
本文介绍了一种电子束抗蚀剂ZEP 520A的开发后，通过化学变化，增加电子曝光来提高蚀刻选择性和改善图案转移保真度。在对关键特征进行图像化和显影后，将抗蚀剂在5kv加速电压下暴露于第二剂量的电子中，剂量范围为300至30万μ C/cm(2)。在CHF3和O-2等离子体中，抗蚀剂的蚀刻速率降低了约25%。更重要的是，模式转移的保真度得到了提高。红外和拉曼光谱用于表征高达3000 μ C/cm(2)的电子束照射前后的抗蚀剂。在电子束照射后，聚合物中的羰基键合表现出显著的变化，这可能与该抗蚀剂的蚀刻性能的改善有关。(C) 2011年美国真空学会。(DOI: 10.1116/1.3562272)
This article describes a postdevelopment, additional electron exposure to enhance the etch selectivity and improve pattern transfer fidelity of an electron beam resist, ZEP 520A, through chemical changes of the resist. After the critical features were patterned and developed, the resist was exposed at 5 kV accelerating voltage to a second dose of electrons ranging from 300 to 300 000 mu C/cm(2). The etch rate of the resist decreased by approximately 25% in a CHF3 and O-2 plasma. More critically, the fidelity of the pattern transfer was improved. Infrared and Raman spectroscopies were used to characterize the resist before and after electron beam exposure for doses up to 3000 mu C/cm(2). The carbonyl bonding in the polymer showed significant changes after electron beam exposure that can be associated with improvement in the etch performance of this resist. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3562272]