The application of ion beam bevel sectioning and post-sputter etch treatment in Auger crater-edge profiling
The application of ion beam bevel sectioning and post-sputter etch treatment in Auger crater-edge profiling
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离子束斜切和溅射后蚀刻处理在俄歇坑边缘轮廓分析中的应用
DOI：
10.1002/sia.740140913
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发表时间：
1989
影响因子：
1.7
通讯作者：
D. K. Skinner
中科院分区：
文献类型：
--
作者：
D. K. Skinner
描述了一种俄歇陨石坑边缘轮廓的方法，该方法利用聚焦离子源的离子束的电子轮廓来形成倾斜截面的溅射形成。这种方法可以产生极浅的角度，允许层状结构的高横向放大，其深度分辨率与传统俄歇剖面所能获得的最佳分辨率相当。讨论了这种方法的许多优点，以及一种提高深度分辨率的新方法的细节。这需要使用低能量溅射和化学辅助反应离子束蚀刻对溅射形成的斜面进行后处理。用埋在Si中的SiO_2和InP/GaInAs超晶格结构的样品验证了这种方法。
A method of Auger crater-edge profiling is described that uses electronic contouring of the ion beam from a focused ion source for the sputter formation of bevelled cross-sections. Vanishingly shallow angles can be produced by this method, allowing high lateral magnification of layered structures with in-depth resolution equal to the best obtainable by conventional Auger profiling. The many advantages of this approach are discussed, together with details of a new approach for improving in-depth resolution. This entails post-treatment of the sputter-formed bevel using low-energy sputtering and chemically assisted reactive ion beam etching. The methods are demonstrated using samples of buried SiO2 in Si and InP/GaInAs superlattice structures.