Indium induced changes in GaN(0001) surface morphology
Indium induced changes in GaN(0001) surface morphology
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DOI：
10.1103/physrevb.60.r8473
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发表时间：
1999-09
影响因子：
3.7
通讯作者：
J. Northrup;J. Neugebauer
中科院分区：
文献类型：
--
作者：
J. Northrup;J. Neugebauer
第一性原理计算表明，In对GaN~(0001)、(0001I)、(101I)和(1011)表面的相对生成能有很大影响。铟引起的表面能级变化使倒置六方锥缺陷在~0001！假晶态InxGa12xN薄膜的表面。对于终止于InxGa12xN(0001I)表面的位错，计算预测了大的(1011)面缺陷在能量上不是有利的。@S0163-1829~99 52036-5#
First-principles calculations of the energetics of the In-terminated GaN~0001!, (0001I ), (101I 1), and (1011) surfaces indicate that In has a substantial effect on the relative energies of formation of these surfaces. Indium-induced changes in the surface energetics enable the formation of inverted hexagonal pyramid defects having (101I 1) facets at the termination of threading defects on the ~0001! surface of pseudomorphic InxGa12xN films. For dislocations terminating on the InxGa12xN(0001I ) surface, the calculations predict that large (1011) faceted defects are not energetically favorable. @S0163-1829~99!52036-5#