Radiation Characterization of Commercial GaN Devices
Radiation Characterization of Commercial GaN Devices
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商用 GaN 器件的辐射特性
DOI：
10.1109/redw.2010.6062526
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
T. Miyahira
中科院分区：
文献类型：
--
作者：
Richard D. Harris;L. Scheick;J. Hoffman;T. Thrivikraman;M. Jenabi;Y. Gim;T. Miyahira
由GaN制造的商用器件开始出现在许多不同的供应商手中。在这项对商用GaN器件的辐射耐受性的初步研究中，选择了几家供应商的几种器件类型。进行了三种不同的研究：1)通过55 MeV质子照射进行了各种部件类型的初步DDD/TID测试，2)通过55 MeV质子辐射对一种特定部件类型进行了详细的DDD/TID研究，以及3)通过重离子照射对各种部件类型进行了SEB/SEGR测试。在这项研究中进行的任何测试中都没有观察到明显的降解。
Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. In this initial study of the radiation tolerance of commercial GaN devices, several device types from several suppliers were chosen. Three different studies were performed: 1) a preliminary DDD/TID test of a variety of part types was performed by irradiating with 55 MeV protons, 2) a detailed DDD/TID study of one particular part type was performed by irradiating with 55 MeV protons, and 3) a SEB/SEGR test was performed on a variety of part types by irradiating with heavy ions. No significant degradation was observed in any of the tests performed in this study.