イオンプレーティング法による Fe-Mg 合金薄膜の作製
イオンプレーティング法による Fe-Mg 合金薄膜の作製
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离子镀法制备铁镁合金薄膜
DOI：
10.2320/jinstmet.72.719
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
義人 松村
中科院分区：
文献类型：
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作者：
潔 篠辺;真英 森田;翔 中村;義人 松村
离子镀工艺是一种真空蒸发工艺。在这项研究中，Bunshah的离子镀系统用于薄膜制备。在该工艺中，可将离子化源材料的致密等离子体通量（~ 2.5A）定量给料并沉积在基板上。源蒸汽的通量被从熔化的蒸发物加速到被称为“探针”的正电极的热电子电离。蒸汽粒子的过剩能量可以通过“探针”的偏置电压来控制。在平衡相图中Fe没有Mg固溶体相。本文采用IP工艺制备了Fe-Mg薄膜。研究了偏压对晶体结构和粒子过剩能量的影响。X射线衍射分析表明，所有样品均为α-Fe体心立方结构。晶格畸变随外加偏压的变化而变化。这些结果表明，蒸汽粒子的过剩能量输入大于Fe和Mg的混合焓。同时，随着Mg含量的增加，Fe中的晶格畸变能增加。样品的薄膜结构依赖于偏压改变的蒸发蒸气粒子的动能。
Ion-plating (IP) process is a kind of vacuum evaporation process. In this study, Bunshah's triode type ion plating system was used for the film preparation. In this process dense plasma flux (~2.5 A) of ionized source materials can be dosed and deposited on a substrate. The flux of the source vapor is ionized by thermal electrons accelerated from melted evaporant to a positive electrode so called “probe”. Excess energy of vapor particles is able to control by applied bias voltage of “probe”. Fe has no Mg solid solution phase in equilibrium phase diagrams. In this study, Fe-Mg thin films were prepared by an IP process. Investigated the relation between crystal structure and excess energy of particles with bias voltage. In all samples, α-Fe body-centered cubic structure was observed by X-ray diffraction patterns. The lattice distortion changed with a change in applied bias voltage. These results were suggested that the excess energy of vapor particles was inputted more than the mixing enthalpy of Fe and Mg. At the same time lattice distortion energy in Fe increased with increasing Mg content. Film structures of samples were dependent on the kinetic energy of evaporated vapor particles changed by bias voltage.