Hardening CMOS imagers: radhard-by-design or radhard-by-foundry
Hardening CMOS imagers: radhard-by-design or radhard-by-foundry
复制标题
强化 CMOS 成像仪：设计 radhard 或铸造厂 radhard
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
R. Stirbl
中科院分区：
文献类型：
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作者：
B. Pain;B. Hancock;T. Cunningham;S. Seshadri;Chao Sun;Pavani Pedadda;C. Wrigley;R. Stirbl
对设计和铸造两种抗辐射加固方法进行了比较研究。指出了在辐射环境下，造成CMOS型成像器性能下降的主要机制，并解释了CMOS型成像器中的辐射效应与数字逻辑电路中的辐射效应之间的主要区别。提出了一种在辐射环境下实现CMOS成像器的设计方法。通过总结在设计雷达和铸造雷达两种方法中实现的成像器所获得的性能结果，确定了这两种方法的优缺点。结果表明，两种方法都不能给出最优解。文章最后讨论了一种替代途径，以克服这些限制，实现下一代高性能抗辐射CMOS成像器。
A comparative study between radhard-by-design and radhard-by-foundry approaches for radiation hardening of CMOS imagers is presented. Main mechanisms for performance degradation in CMOS imagers in a radiation environment are identified, and key differences between the radiation effects in CMOS imagers and that in digital logic circuits are explained. Design methodologies for implementation of CMOS imagers operating in a radiation environment are presented. By summarizing the performance results obtained from imagers implemented in both radhard-by-design and radhard-by-foundry approaches, the advantages and shortcomings of both approaches are identified. It is shown that neither approach presents an optimum solution. The paper concludes by discussing an alternate pathway to overcome these limitations and enable the next-generation high-performance radiation-hard CMOS imagers.