X-ray Photon Counting Using 100 MHz Ready-Made Silicon P–Intrinsic–N X-ray Diode and Its Application to Energy-Dispersive Computed Tomography

X-ray Photon Counting Using 100 MHz Ready-Made Silicon P–Intrinsic–N X-ray Diode and Its Application to Energy-Dispersive Computed Tomography
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使用 100 MHz 现成硅 P–本征–N X 射线二极管进行 X 射线光子计数及其在能量色散计算机断层扫描中的应用

DOI:
10.7567/jjap.52.072202
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发表时间:
2013
影响因子:
1.5
通讯作者:
A. Ogawa
A. Ogawa
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Hajime Kodama;Manabu Watanabe;E. Sato;Yasuyuki Oda;Osahiko Hagiwara;H. Matsukiyo;Akihiro Osawa;Toshiyuki Enomoto;S. Kusachi;Shigehiro Sato;A. Ogawa

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使用100 MHz现成的硅P本征N X射线二极管(Si-PIN-XD)直接检测X射线光子。Si-PIN-XD采用带25 µ m厚铝窗和BNC连接器的铝壳进行屏蔽。来自Si-PIN-XD的光电流由电荷敏感和整形放大器放大,事件脉冲被发送到多通道分析器(MCA)以测量X射线光谱。在管电压为90千伏时,我们观察到钨的K系列特征X射线。光子计数计算机断层摄影(PC-CT)通过重复线性扫描和物体的旋转来完成,并且通过在2.0mA的管电流下线性扫描来获得物体的投影曲线。获得断层图像的曝光时间为10 min,扫描步长为0.5 mm,旋转步长为1.0°。在管电压为90 kV时,最大计数率为150 kcps。我们使用钆介质进行PC-CT,并使用比较器确认事件脉冲的低电平电压变化的能量分散效应。
X-ray photons are directly detected using a 100 MHz ready-made silicon P–intrinsic–N X-ray diode (Si-PIN-XD). The Si-PIN-XD is shielded using an aluminum case with a 25-µm-thick aluminum window and a BNC connector. The photocurrent from the Si-PIN-XD is amplified by charge sensitive and shaping amplifiers, and the event pulses are sent to a multichannel analyzer (MCA) to measure X-ray spectra. At a tube voltage of 90 kV, we observe K-series characteristic X-rays of tungsten. Photon-counting computed tomography (PC-CT) is accomplished by repeated linear scans and rotations of an object, and projection curves of the object are obtained by linear scanning at a tube current of 2.0 mA. The exposure time for obtaining a tomogram is 10 min with scan steps of 0.5 mm and rotation steps of 1.0°. At a tube voltage of 90 kV, the maximum count rate is 150 kcps. We carry out PC-CT using gadolinium media and confirm the energy-dispersive effect with changes in the lower level voltage of the event pulse using a comparator.
DOI: --
发表时间: 2015
期刊: Ann. Rep. Iwate Med. Univ. Center Lib. Arts Sci.
影响因子: --
作者:
Y. Oda;E. Sato;M. Sagae;S. Yamaguchi;O. Hagiwara;H. Matsukiyo;M. Watanabe;S. Kusachi
通讯作者: S. Kusachi