Neutron-induced latchup in SRAMs at ground level
Neutron-induced latchup in SRAMs at ground level
复制标题
地面 SRAM 中的中子引起的闩锁
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
G. L. Hash
中科院分区：
文献类型：
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作者：
P. Dodd;M. Shaneyfelt;J. Schwank;G. L. Hash
中子引起的单粒子闭锁已经在几个不同的供应商制造的SRAM中进行了研究。这些SRAM跨越不同的单元设计（六晶体管和四晶体管单元）、技术世代（0.25 /spl mu/m至0.14 /spl mu/m）和电源（5 V至1.5 V）。虽然有些技术在中子环境中似乎是无闭锁的，但其他技术在室温和最大额定电压下的中子诱发闭锁故障时间（FIT）率高达300 FIT/Mbit。闩锁FIT率随着温度的升高而显著增加。在具有大量内存的系统中，观察到的闭锁率可能导致非常高的故障率，并且无法使用错误校正来规避。
Neutron-induced single-event latchup has been studied in SRAMs manufactured by several different vendors. These SRAMs span different cell designs (six-transistor and four-transistor cells), technology generations (0.25 /spl mu/m to 0.14 /spl mu/m) and power supplies (5 V to 1.5 V). While some technologies appear to be latchup-free in neutron environments, others have neutron-induced latchup failure-in-time (FIT) rates as high as 300 FIT/Mbit at room temperature and maximum rated voltage. Latchup FIT rates increase dramatically with temperature. The observed latchup rates can lead to very high failure rates in systems with large amounts of memory, and cannot be circumvented using error correction.