Single-electron quantum dot in Si/SiGe with integrated charge sensing
Single-electron quantum dot in Si/SiGe with integrated charge sensing
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DOI：
10.1063/1.2816331
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发表时间：
2007-11-19
影响因子：
4
通讯作者：
Eriksson, M. A.
中科院分区：
文献类型：
--
作者：
Simmons, C. B.;Thalakulam, Madhu;Eriksson, M. A.
单电子占据是测量和操纵量子点中自旋的重要组成部分，而自旋能力对量子信息处理非常重要。Si/SiGe对半导体自旋量子比特很感兴趣，但单电子量子点还没有在这个系统中实现。报道了Si/SiGe异质结中单电子占据的顶栅量子点的制备和测量。通过量子点的传输与来自集成量子点接触的电荷感测直接相关，这种电荷感测用于确认量子点中的单电子占据。(C)2007年美国物理研究所。
Single-electron occupation is an essential component to the measurement and manipulation of spin in quantum dots, capabilities that are important for quantum information processing. Si/SiGe is of interest for semiconductor spin qubits, but single-electron quantum dots have not yet been achieved in this system. We report the fabrication and measurement of a top-gated quantum dot occupied by a single electron in a Si/SiGe heterostructure. Transport through the quantum dot is directly correlated with charge sensing from an integrated quantum point contact, and this charge sensing is used to confirm single-electron occupancy in the quantum dot. (C) 2007 American Institute of Physics.