Exchange bias in diluted-antiferromagnet/antiferromagnet bilayers
Exchange bias in diluted-antiferromagnet/antiferromagnet bilayers
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DOI：
10.1088/0022-3727/48/2/025002
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发表时间：
2015-01
期刊：
影响因子：
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通讯作者：
Z. Mao;Xiaozhi Zhan;Xi Chen
中科院分区：
文献类型：
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作者：
Z. Mao;Xiaozhi Zhan;Xi Chen
利用数值模拟方法研究了稀释反铁磁层与反铁磁层交换耦合的磁回线特性。观察到显着的循环移位和双折射率增强，在这样的双折射/AF双层，而它们是不存在的未耦合的双折射单层。系统地研究了钉扎畴、稀释度、冷却场和冷却层厚度对回线位移的影响。该结果明确证实了交换偏置（EB）的影响，在双电层/AF。这也揭示了EB效应起源于钉扎AF畴在层内。与传统的EB系统相比，在AF钉扎层的界面处没有发现冻结的未补偿自旋。
The hysteresis-loop properties of a diluted-antiferromagnetic (DAF) layer exchange coupling to an antiferromagnetic (AF) layer are investigated by means of numerical simulations. Remarkable loop shift and coercivity enhancement are observed in such DAF/AF bilayers, while they are absent in the uncoupled DAF single layer. The influences of pinned domains, dilution, cooling field and DAF layer thickness on the loop shift are investigated systematically. The result unambiguously confirms an exchange bias (EB) effect in the DAF/AF bilayers. It also reveals that the EB effect originates from the pinned AF domains within the DAF layer. In contrast to conventional EB systems, frozen uncompensated spins are not found at the interface of the AF pinning layer.