Temperature dependence of the band gap of ZnSe1-xOx
Temperature dependence of the band gap of ZnSe1-xOx
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DOI：
10.1063/1.3242026
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发表时间：
2009-10-12
影响因子：
4
通讯作者：
Nabetani, Y.
中科院分区：
文献类型：
--
作者：
Broesler, R.;Haller, E. E.;Nabetani, Y.
我们利用光致发光光谱研究了分子束外延生长的ZnSe_（1-x）Ox薄膜（x=0-0.021）的带隙随温度的变化。带隙的温度依赖性随着氧浓度的增加而减小，这可以定量地解释为高度局域化的氧缺陷态和导带的扩展态之间的反交叉相互作用。(C)2009年美国物理学会。[doi：10.1063/1.3242026]
We have studied the temperature dependence of the band gap of molecular-beam-epitaxy-grown ZnSe1-xOx films (x=0-0.021) using photoluminescence spectroscopy from 15 to 280 K. The temperature dependence of the band gap decreases with increasing oxygen concentration, which can be quantitatively explained by an anticrossing interaction between the highly localized oxygen defect states and the extended states of the conduction band. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3242026]