Impact of damage-free wet etching process on fabrication of high breakdown voltage GaN p–n junction diodes
Impact of damage-free wet etching process on fabrication of high breakdown voltage GaN p–n junction diodes
复制标题
无损伤湿法刻蚀工艺对高击穿电压 GaN p-n 结二极管制造的影响
DOI：
10.7567/1347-4065/ab0401
复制
发表时间：
2019
影响因子：
1.5
通讯作者：
T. Mishima
中科院分区：
文献类型：
--
作者：
N. Asai;H. Ohta;F. Horikiri;Yoshinobu Narita;Takehiro Yoshida;T. Mishima
采用脉冲光电化学（PEC）蚀刻来制造台面结构垂直 GaN p-n 结二极管，而不会造成传统干法蚀刻工艺中不可避免的工艺损坏。通过光致发光和阴极发光测量证实了无损伤的蚀刻表面。与传统干法刻蚀（3.36-3.81 kV）制造的GaN p-n结二极管相比，PEC刻蚀制造的GaN p-n结二极管最有利的特性是其击穿电压（3.83-3.88 kV）的变化大大减少。这些结果表明 PEC 刻蚀在 GaN 功率器件制造中的巨大潜力。
Pulsed photo-electrochemical (PEC) etching was performed to fabricate mesa-structure vertical GaN p–n junction diodes without process damages which are inevitable in the conventional dry etching process. The damage-free etched surface was confirmed by photoluminescence and cathode luminescence measurements. The most beneficial property of the GaN p–n junction diodes fabricated by PEC etching was the much reduced variation in their breakdown voltages (3.83–3.88 kV) compared with those fabricated by conventional dry etching (3.36–3.81 kV). These results indicate the excellent potential of PEC etching in the fabrication of GaN power devices.