Extracting more light for vertical emission: high power continuous wave operation of 1.3-μm quantum-dot photonic-crystal surface-emitting laser based on a flat band

Extracting more light for vertical emission: high power continuous wave operation of 1.3-μm quantum-dot photonic-crystal surface-emitting laser based on a flat band
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DOI:
10.1038/s41377-019-0214-2
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发表时间:
2019-11-22
影响因子:
19.4
通讯作者:
Wang, Li-Jun
Wang, Li-Jun
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Lu, Huan-Yu;Tian, Si-Cong;Wang, Li-Jun

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对于长距离光互连,1.3微米面发射激光器是关键器件。然而,几毫瓦的低输出功率限制了它们的应用。在本研究中,通过引入一种二维光子晶体,以InAs量子点为激活材料,获得了一台输出功率为13.3 mW、波长为1.3微米的室温表面发射激光器。此外,这种器件可以在高达90摄氏度的高温下工作。增强的输出功率来自于光子晶体的平带结构和额外的反馈机制。表面发射通过光子晶体衍射实现,从而消除了分布布拉格反射镜。该器件为克服低功率1.3微米表面发射激光器的局限性和增加其应用数量提供了一种手段。
For long distance optical interconnects, 1.3-mu m surface-emitting lasers are key devices. However, the low output power of several milliwatts limits their application. In this study, by introducing a two-dimensional photonic-crystal and using InAS quantum dots as active materials, a continuous-wave, 13.3-mW output power, 1.3-mu m wavelength, room-temperature surface-emitting laser is achieved. In addition, such a device can be operated at high temperatures of up to 90 degrees C. The enhanced output power results from the flat band structure of the photonic crystal and an extra feedback mechanism. Surface emission is realized by photonic crystal diffraction and thus the distributed Bragg reflector is eliminated. The proposed device provides a means to overcome the limitations of low-power 1.3-mu m surface-emitting lasers and increase the number of applications thereof.