Carrier-density dependence of magnetic and magneto-optical properties of (Ga,Mn)As

Carrier-density dependence of magnetic and magneto-optical properties of (Ga,Mn)As
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DOI:
10.1103/physrevb.67.115203
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发表时间:
2003-03
期刊:
影响因子:
3.7
通讯作者:
Tatsuya Komori;T. Ishikawa;T. Kuroda;J. Yoshino;F. Minami;S. Koshihara
Tatsuya Komori;T. Ishikawa;T. Kuroda;J. Yoshino;F. Minami;S. Koshihara
中科院分区:
物理与天体物理2区
文献类型:
--
作者:
Tatsuya Komori;T. Ishikawa;T. Kuroda;J. Yoshino;F. Minami;S. Koshihara

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研究了用分子束外延方法生长的具有两种空穴载流子浓度的(Ga,Mn)As薄膜的磁性和磁圆二色性(MCD)。为了控制(Ga,Mn)As中的载流子密度,我们利用Sn原子来补偿由于Mn2+原子取代Ga而导致的空穴载流子的本征掺杂。MCD的大小和谱形以及磁序都与空穴载流子密度有着显著的相关性。所观察到的MCD和正常吸收光谱的变化取决于空穴载流子密度可以解释由Szczytko等人提出的模型。其中包括的影响的障碍和费米能级的变化。
We studied the magnetic properties and the magnetic circular dichroism (MCD) of (Ga,Mn)As films with two kinds of the hole-carrier density though keeping a constant value in the Mn concentration grown by the molecular beam epitaxy method. To control the carrier density in (Ga,Mn)As, we utilized Sn atoms, which compensate the hole carriers intrinsically doped due to substitution of Mn 2 + atoms for Ga. The magnitude and the spectral shape of the MCD and the magnetic order have shown remarkable dependence on the hole-carrier density. The observed MCD and normal absorption spectral changes depending on the hole-carrier density can be explained by the model proposed by Szczytko et al. which includes the effects of the disorder and the change in the Fermi energy level.