Fabrication of YSZ Thin Films by Chemical Vapor Infiltration Using NiO as Oxygen Source
Fabrication of YSZ Thin Films by Chemical Vapor Infiltration Using NiO as Oxygen Source
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NiO 为氧源化学气相渗透法制备 YSZ 薄膜
DOI：
10.1149/1.1605745
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发表时间：
2003
影响因子：
3.9
通讯作者：
Z. Ogumi
中科院分区：
文献类型：
--
作者：
K. Kikuchi;T. Okaya;W. Hirose;Kazuaki Matsuo;A. Mineshige;Z. Ogumi
采用改进的化学气相渗透法在NiO基底上制备了氧化钇稳定的氧化锆（YSZ）薄膜，温度为1000-1200°C。以ZrCl 4和YCl 3为金属源。YSZ薄膜的生长速率与沉积时间无关，但受载气流量的影响。Ar载气中所含的氧也用作氧源。该氧在刚接通气体供给后吸附在YSZ膜表面上，与金属源气体反应。发现在每个化学气相渗透周期中的大的压力波动显著地提高YSZ膜的生长速率。
A yttria-stabilized zirconia (YSZ) film was successfully fabricated by a modified chemical vapor infiltration process at 1000-1200°C on a NiO substrate that also served as an oxygen source. ZrCl 4 and YCl 3 were used as metal sources. The growth rate of the YSZ film was independent of deposition time but was influenced by the carrier gas flow rate. The oxygen contained in the Ar carrier gas also served as an oxygen source. This oxygen, which adsorbed on the YSZ film surface immediately after the gas supply was turned on, reacted with the metal source gases. The large fluctuation in pressure during each a chemical vapor infiltration cycle was found to enhance the growth rate of YSZ films dramatically.