Surface Studies of III-V Materials: Oxidation Control and Device Implications
Surface Studies of III-V Materials: Oxidation Control and Device Implications
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III-V 材料的表面研究：氧化控制和器件影响
DOI：
10.1149/1.3119561
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
R. Wallace
中科院分区：
文献类型：
--
作者：
C. Hinkle;M. Milojević;A. Sonnet;Hyunchul Kim;Jiyoung Kim;E. Vogel;R. Wallace
尽管III-V族半导体材料的研究历史悠久，但对这些衬底的各个氧化态的确定和控制仍然知之甚少。在这项研究中，多个表面处理已被用来确定的存在和浓度的个别氧化态的As和Ga。这些表面氧化物的去除是通过特定的技术证明。已确定并非所有这些氧化态都具有差的电质量，而消除某些氧化态的存在导致MOS器件性能的显著改善。
Despite the long history of research on III-V semiconductor materials, the determination and control of the individual oxidation states of these substrates is still poorly understood. In this study, multiple surface treatments have been employed to determine the presence and concentration of the individual oxidation states of both As and Ga. The removal of these surface oxides is demonstrated through particular techniques. It is established that not all of these oxidation states are of poor electrical quality, while eliminating the presence of certain oxidation states results in a marked improvement in MOS device performance.