High-Dose Implantation of MeV Carbon Ion into Silicon
High-Dose Implantation of MeV Carbon Ion into Silicon
复制标题
MeV 碳离子高剂量注入硅
DOI：
10.1143/jjap.31.139
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发表时间：
1992
影响因子：
1.5
通讯作者：
Mamoru Satou Mamoru Satou
中科院分区：
文献类型：
--
作者：
A. Chayahara;M. Kiuchi;Y. Horino;Kanenaga Fujii Kanenaga Fujii;Mamoru Satou Mamoru Satou
使用红外吸收光谱和卢瑟福背散射 (RBS) 演示了通过 1.5 MeV C+ 注入至 1.5×1018 离子/cm2 剂量然后退火在硅晶片中形成 SiC。从沟道条件下He+背向散射的结果可以看出，即使在退火之前，Si的表面层仍保持结晶状态。
The formation of SiC in silicon wafer by 1.5 MeV C+ implantation to doses of 1.5×1018 ions/cm2 followed by annealing is demonstrated using infrared absorption spectra and Rutherford backscattering (RBS). From the results of He+ backscattering under the channeling condition, the surface layer of Si is observed to remain crystalline even before annealing.