Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS
Heteroepitaxial growth of a wide-gap p-type semiconductor, LaCuOS
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宽禁带 p 型半导体 LaCuOS 的异质外延生长
DOI：
10.1063/1.1494853
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发表时间：
2002
影响因子：
4
通讯作者：
H. Hosono
中科院分区：
文献类型：
--
作者：
H. Hiramatsu;Kazushige Ueda;H. Ohta;M. Orita;M. Hirano;H. Hosono
采用独特的方法在氧化钇稳定的氧化锆（001）或MgO（001）单晶衬底上生长了高质量的宽禁带p型半导体LaCuOS外延薄膜。在1000 °C下对由极薄的金属铜层和非晶LaCuOS层构成的双层膜进行退火后处理，得到外延生长的LaCuOS薄膜。 这种具有高取向的薄铜层可能充当外延引发剂，对于外延生长是必不可少的。所得的外延膜在室温下表现出相对较强的与激子相关的紫外发射，证实了膜的高晶体质量。
High-quality epitaxial films of LaCuOS, a wide-gap p-type semiconductor, are grown on yittria-stabilized-zirconia (001) or MgO (001) single-crystal substrates by a unique method. Postannealing of a bilayer film composed of an extremely thin metallic copper layer and an amorphous LaCuOS layer at 1000 °C results in an epitaxially grown LaCuOS thin film. This thin copper layer with high orientation, which likely acts as an epitaxial initiator, is essential for epitaxial growth. The resulting epitaxial films exhibit relatively intense ultraviolet emission associated with excitons at room temperature, confirming the high crystal quality of the films.