Excitonic and Raman properties of ZnSe/Zn1−xCdxSe strained‐layer quantum wells
Excitonic and Raman properties of ZnSe/Zn1−xCdxSe strained‐layer quantum wells
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DOI：
10.1063/1.348543
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发表时间：
1991-03
影响因子：
3.2
通讯作者：
H. Lozykowski;V. Shastri
中科院分区：
文献类型：
--
作者：
H. Lozykowski;V. Shastri
研究了应变层ZnSe/Zn 0. 86 Cd 0. 14 Se单量子威尔斯阱的光学性质。详细研究了直接和间接激发下的光致发光。研究了光致发光和共振拉曼散射的温度依赖性。在Zn0.86Cd0.14Se量子威尔斯阱中观察到非常强的2LO-声子拉曼散射，其中散射的光子能量与激子跃迁共振。实验激子能量进行了比较，有限平方势量子阱模型，包括带非抛物性和应变效应。根据希尔的理论[J. Phys. C 7，521（1974）]，我们计算了Zn 1-xCdxSe的带隙随组成x的变化。
The optical properties of strained‐layer ZnSe/Zn0.86Cd0.14Se single quantum wells have been studied. The photoluminescence under direct and indirect excitation is investigated in detail. The temperature dependence of photoluminescence and resonant Raman scattering are investigated. Very strong 2LO‐phonon Raman scattering has been observed with Zn0.86Cd0.14Se quantum wells, where the scattered photon energy is in resonance with an exciton transition. Experimental exciton energies are compared with a finite‐square‐potential quantum‐well model including band nonparabolicity and the strain effect. Based on Hill’s theory [J. Phys. C 7, 521 (1974)] we have computed the band gap of Zn1−xCdxSe as a function of composition x.