ELECTRON PARAMAGNETIC RESONANCE OF ION‐IMPLANTED DONORS IN SILICON
ELECTRON PARAMAGNETIC RESONANCE OF ION‐IMPLANTED DONORS IN SILICON
复制标题
硅中离子注入施主的电子顺磁共振
DOI：
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发表时间：
1970
期刊：
影响因子：
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通讯作者：
J. Borders
中科院分区：
文献类型：
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作者：
K. L. Brower;J. Borders
已观察到注入硅中的 As75、Sb121 和 Sb123 替代施主的 EPR。还观察到与损伤相关的 Si-P3 和 Si-P1 中心共振。在室温下将样品注入至约 1013 离子/cm2 的注量，并在样品等时退火至 970 °C 时监测与损伤和注入杂质相关的 EPR 光谱。在 400°C 照明退火后和 600°C 无照明退火后观察注入供体的光谱。在 ~ 900 °C 退火后，通过 EPR 观察到的取代的注入锑的比例明显大于注入砷的比例。
The EPR of As75, Sb121, and Sb123 substitutional donors implanted in silicon have been observed. The Si‐P3 and Si‐P1 center resonances associated with the damage were also observed. Samples were implanted at room temperature to fluences of ∼ 1013 ions/cm2, and the EPR spectra associated with the damage and the implanted impurities were monitored as the samples were isochronally annealed to 970 °C. The spectra of the implanted donors were observed after the 400 °C anneal with illumination and following the 600 °C anneal without illumination. After the anneal at ∼ 900 °C, the proportion of implanted antimony that is observed by EPR to be substitutional is significantly larger than for the implanted arsenic.