Green electroluminescence from p-ZnO:N/n-GaN heterojunction light-emitting diodes
Green electroluminescence from p-ZnO:N/n-GaN heterojunction light-emitting diodes
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DOI：
10.1088/2053-1591/2/2/025901
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发表时间：
2015-02
影响因子：
2.3
通讯作者：
Lei Wang;Haiyang Xu;Yichun Liu;Linjiang Shen
中科院分区：
文献类型：
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作者：
Lei Wang;Haiyang Xu;Yichun Liu;Linjiang Shen
采用氮等离子体辅助脉冲激光沉积技术在n型GaN衬底上沉积Zn 3 N2薄膜，通过热氧化法成功制备了p-ZnO：N/n-GaN异质结发光二极管。p-ZnO：N/n-GaN发光二极管具有典型的二极管电流-电压（I-V）特性，其电致发光波长为517 nm。通过X射线衍射、I-V测量和电致发光光谱的综合分析，证实了这种绿色电致发光来自于p-ZnO：N层。
A p-ZnO:N/n-GaN heterojuction light emitting diode was successfully constructed by thermal oxidation of Zn3N2 film which was deposited on n-type GaN substrates by N-plasma assisted pulsed laser deposition technology. The p-ZnO:N/n-GaN light emitting diode showed a typical diode current–voltage (I–V) characteristic and an electroluminescence emission of 517 nm was observed. This green electroluminescence emission came from the p-ZnO:N layer, which was confirmed by analyzing the results of x-ray diffraction, I–V measurement and electroluminescence spectra comprehensively.