Epitaxial CuN Films with Highly Tunable Lattice Constant for Lattice-Matched Magnetic Heterostructures with Enhanced Thermal Stability
Epitaxial CuN Films with Highly Tunable Lattice Constant for Lattice-Matched Magnetic Heterostructures with Enhanced Thermal Stability
复制标题
具有高度可调晶格常数的外延 CuN 薄膜，用于具有增强热稳定性的晶格匹配磁性异质结构
DOI：
10.1002/aelm.201700367
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发表时间：
2017
影响因子：
6.2
通讯作者：
and Koki Takanashi
中科院分区：
文献类型：
--
作者：
Zhenchao Wen;Takahide Kubota;and Koki Takanashi
具有显著磁电性能的晶格匹配磁性异质结构的先进材料工程对未来的自旋电子器件特别重要。在这里，具有高度可调的晶格常数和电阻率的外延氮化铜薄膜的制造。CuN薄膜的晶格常数控制在0.362 ~ 0.388 nm之间，电阻率在两个数量级以上的范围内变化。实现了晶格匹配的CuN/Co2Fe0.4Mn0.6Si（CFMS）异质结构。一个显着的增强的异质结构的热稳定性的Cu/CFMS观察。此外，使用晶格匹配的CuN间隔物制造磁阻纳米结，并观察到在高退火温度下的磁阻效应的增强。这项工作表明，在晶格匹配的异质结构中，CuN薄膜的晶格常数和电阻率的操纵对于设计未来先进的电子材料以开发自旋电子器件可能是重要的。
The engineering of advanced materials for lattice‐matched magnetic heterostructures with remarkable magnetoelectric properties is of particular importance for future spintronic devices. Here, epitaxial CuN films with highly tunable lattice constant and resistivity are fabricated. The lattice constant of the CuN films is controlled from 0.362 to 0.388 nm, and the resistivity is varied over a range of more than two orders of magnitude. Lattice‐matched CuN/Co2Fe0.4Mn0.6Si (CFMS) heterostructures are achieved. A dramatic enhancement of the thermal stability of the heterostructure over that of Cu/CFMS is observed. Furthermore, magnetoresistance nanojunctions are fabricated using lattice‐matched CuN spacers, and an enhancement of the magnetoresistance effect at high annealing temperatures is observed. This work shows that the manipulation of the lattice constant and resistivity of CuN films in lattice‐matched heterostructures can be important for engineering future advanced electronic materials for the development of spintronic devices.