Improving Intrinsic Silicon Nanoparticle Film by Press Treatment for use in p?i?n Solar Cells
Improving Intrinsic Silicon Nanoparticle Film by Press Treatment for use in p?i?n Solar Cells
复制标题
通过压制处理改善本征硅纳米颗粒薄膜，用于 p?i?n 太阳能电池
DOI：
10.1109/pvsc.2018.8547319
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Soga Tetsuo
中科院分区：
文献类型：
--
作者：
Ichihara Eiji;Kato Shinya;Akaishi Ryushiro;Gotoh Kazuhiro;Kurokawa Yasuyoshi;Kishi Naoki;Soga Tetsuo
采用自旋镀膜技术制备了一种本禀硅纳米粒子（i-SiNP）层，并将其用作太阳能电池的有源层。通过压印处理，提高了i-SiNP层的电导率，提高了sinp层的密度和电导率。拉曼光谱和电子自旋共振结果表明，SiNPs仅相互接触而没有结合在一起。为了制备具有i-SiNP有源层的太阳能电池，用a- si合成了p型和n型掺杂层。电池开路电压140mV。
An intrinsic silicon nanoparticle (i-SiNP) layer was fabricated using the spin-coating technique and utilized as the active layer of a solar cell. The electrical conductivity of the i-SiNP layer was enhanced via press treatment, which increased the density and electrical conductivity of the SiNPs. Raman spectroscopy and electron-spin resonance results indicated that the SiNPs were only in contact with each other and were not bound together. To fabricate a solar cell with an i-SiNP active layer, a-Si was used to synthesize the p- and n-type doping layers. The open-circuit voltage of the cell was 140mV.