Ni–Zn ferrite films with high resonance frequency in the gigahertz range deposited by magnetron sputtering at room temperature
Ni–Zn ferrite films with high resonance frequency in the gigahertz range deposited by magnetron sputtering at room temperature
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DOI：
10.1088/0022-3727/42/12/125006
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发表时间：
2009-06
期刊：
影响因子：
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通讯作者：
D. Guo;Zhengmei Zhang;Min Lin;Xiaolong Fan;G. Chai;Y. Xu;D. Xue
中科院分区：
文献类型：
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作者：
D. Guo;Zhengmei Zhang;Min Lin;Xiaolong Fan;G. Chai;Y. Xu;D. Xue
采用射频磁控溅射法在Si（111）衬底上制备了厚度约为1.5 μm、具有尖晶石结构的NixZn1−xFe2O4（0.28 μ m × 0.70）薄膜。在高达5.5 GHz的频率下测量沉积膜的复磁导率μ = μ′ − iμ″值。随着Ni含量x的增加，磁导率的真实的部分μ′从20.5减小到7，而谐振频率fr从1.85增加到4.3 GHz。优化x = 0.45的薄膜在2.8 GHz的fr下表现出大的μ′（15）和μ″（21）。结果表明，所有薄膜都表现出很高的fr，超过了铁氧体块体试样的Snoek极限值，并对其原因进行了初步探讨。
NixZn1−xFe2O4 (0.28 ⩽ x ⩽ 0.70) thin films with well-crystallized spinel structure and thickness ∼1.5 µm were prepared by radio frequency magnetron sputtering at room temperature on Si(1 1 1) substrates. The complex permeability μ = μ′ − iμ″ values of as-deposited films were measured at frequencies up to 5.5 GHz. With increasing Ni content x the real part of the permeability μ′ decreased from 20.5 to 7, while the resonance frequency fr increased from 1.85 up to 4.3 GHz. Film with optimized x = 0.45 exhibited a large μ′ of 15 and μ″ of 21 at an fr of 2.8 GHz. It was noted that all the films exhibited very high fr exceeding Snoek's limit value of the ferrite bulk specimen, and the reason was investigated preliminarily.