InGaN/GaN Laser Diodes With High Order Notched Gratings
InGaN/GaN Laser Diodes With High Order Notched Gratings
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DOI：
10.1109/lpt.2017.2759903
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发表时间：
2017-12
影响因子：
2.6
通讯作者：
T. Slight;A. Yadav;O. Odedina;W. Meredith;K. Docherty;E. Rafailov;A. Kelly
中科院分区：
文献类型：
--
作者：
T. Slight;A. Yadav;O. Odedina;W. Meredith;K. Docherty;E. Rafailov;A. Kelly
报道了具有高阶光栅结构的InGaN/GaN分布反馈激光二极管的单波长428 nm激光输出。第39阶陷波光栅的优点是制造路线简化，不需要过度生长。激光脊和光栅是通过电子束光刻和ICP刻蚀形成的。解理激光器以脉冲方式发射，峰值单模输出功率为15 mW。光栅设计的优化应导致更高功率的单波长操作。
We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.