Highly Improved Electrical Properties of Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Prepared by Ultrahigh Vacuum Process
Highly Improved Electrical Properties of Diamond Metal-Insulator-Semiconductor Field-Effect-Transistor Prepared by Ultrahigh Vacuum Process
复制标题
超高真空工艺制备金刚石金属绝缘体半导体场效应晶体管的电性能得到显着改善
DOI：
10.1143/jjap.38.2640
复制
发表时间：
1999
影响因子：
1.5
通讯作者：
Takeshi Kobayashi
中科院分区：
文献类型：
--
作者：
Young Yun;T. Maki;Hiroyuki Tanaka;Takeshi Kobayashi
为了在器件加工过程中尽可能防止金刚石表面的氧污染，采用超高真空（UHV）工艺和减氧工艺制备了金刚石金属-绝缘体-半导体场效应晶体管（MISFET），并对其电性能进行了详细研究。与传统的金刚石FET相比，MISFET在电性能方面表现出很大的改进。室温下观察到的有效迁移率 (μeff) 为 400 cm2/V·s，这是迄今为止金刚石 FET 在室温下获得的最高值。根据本文推导出的漏极电导GD与表面态密度NSS(GD-NSS)关系，发现与传统金刚石FET相比，MISFET的表面态密度大大降低(∼1010/(cm2·eV))。
In order to prevent oxygen contamination of the diamond surface as much as possible during the device process, a diamond metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated by the ultrahigh-vacuum (UHV) process as well as the reduced-oxygen process, and its electrical properties were investigated in detail. Compared with conventional diamond FETs, the MISFET exhibited great improvement in electrical properties. The observed effective mobility (µeff) was 400 cm2/V·s at room temperature, which is the highest value obtained to date for the diamond FET at room temperature. According to the drain conductance GD vs surface state density NSS(GD-NSS) relation derived in this work, it was found that the surface state density of the MISFET was decreased to a great extent (∼1010/(cm2·eV)) in comparison with those of conventional diamond FETs.
钻石“非”和“或非”逻辑电路
DOI：
--
发表时间：
2017
期刊：
影响因子：
--
作者：
J. W. Liu;M. Y. Liao;M. Imura;and Y. Koide,
通讯作者：
and Y. Koide,