Symmetric and asymmetric spike-timing-dependent plasticity function realized in a tunnel-field-effect-transistor-based charge-trapping memory
Symmetric and asymmetric spike-timing-dependent plasticity function realized in a tunnel-field-effect-transistor-based charge-trapping memory
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DOI：
10.35848/1347-4065/ab6867
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发表时间：
2020-02
影响因子：
1.5
通讯作者：
H. Kino;T. Fukusima;Tetsu Tanaka
中科院分区：
文献类型：
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作者：
H. Kino;T. Fukusima;Tetsu Tanaka
脉冲神经网络因其能以相对较低的功耗执行认知任务而备受关注。此外，我们提出了一种基于隧道场效应晶体管（TFET）的电荷俘获存储器，以降低基于闪存的神经网络电路的功耗。所制造的基于TFET的存储单元的电流 - 电压特性是电荷俘获存储器的典型特性。然后，我们测量了所制造的基于TFET的存储单元的对称和非对称的脉冲时间依赖可塑性（STDP）特性。所获得的特性重现了生物突触的STDP。这些结果表明，所提出的器件有可能应用于神经网络电路。
Spiking neural networks are attracting significant attention because they can perform cognitive tasks with relatively low power. In addition, we proposed a tunnel field-effect transistor (TFET)-based charge trapping memory to reduce the power consumption of the flash memory-based neural network circuit. The current-voltage characteristics of the fabricated TFET based memory cell were typical of the charge trapping memory. We then measured the symmetric and asymmetric spike-timing-dependent plasticity (STDP) characteristics of the fabricated TFET-based memory cell. The obtained characteristics reproduce the STDP of a biological synapse. These results indicated that there is a possibility of applying the proposed devices to neural network circuits.