Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth
Pulsed supersonic jet epitaxy: A nonthermal approach to silicon growth
复制标题
脉冲超音速喷射外延：硅生长的非热方法
DOI：
10.1063/1.115809
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
E. Gulari
中科院分区：
文献类型：
--
作者：
R. Malik;E. Gulari
在这封信中，我们展示了一种在Si（100）上低温外延生长单晶硅薄膜的独特方法。脉冲超音速射流外延（PSJE）采用高动能的二硅烷-氢混合物射流入射到表面，导致一层一层的生长。精确控制薄膜厚度和显著提高粘接系数。讨论了脉冲频率与生长速率的关系及其意义。我们已经能够在低至400°C的温度下重复沉积高质量的单晶薄膜，而无需使用任何外部激活。
In this letter, we demonstrate a unique approach for low temperature epitaxial growth of single crystal silicon films on Si(100). Pulsed supersonic jet epitaxy (PSJE), employs high kinetic energy jets of a disilane‐hydrogen mixture incident on the surface leading to layer by layer growth. Precise control of film thickness and significantly higher sticking coefficients are demonstrated. Growth rate dependence of pulse frequency and its implications are discussed. We have been able to reproducibly deposit good quality single crystalline films at temperatures as low as 400 °C with this technique, without the use of any external activation.