Engineering the Photoresponse of InAs Nanowires
Engineering the Photoresponse of InAs Nanowires
复制标题
DOI：
10.1021/acsami.7b14415
复制
发表时间：
2017-12-20
影响因子：
9.5
通讯作者：
Joyce, Hannah J.
中科院分区：
文献类型：
--
作者：
Alexander-Webber, Jack A.;Groschner, Catherine K.;Joyce, Hannah J.
我们报告的个人InAs纳米线光电子器件，可以定制表现出无论是，负或正光电导（NPC或PPC）。NPC的光响应时间和幅度被发现是高度可调的，通过改变纳米线的直径在受控的生长条件下。使用滞后特性，我们解耦所观察到的光激发诱导的热电子捕获从传统的'电场诱导的捕获，以获得一个基本的洞察，界面陷阱状态负责NPC。此外，我们证明了表面钝化，而无需化学蚀刻，这两者都提高了纳米线的场效应迁移率约一个数量级，并有效地消除了热载流子捕获被发现是负责NPC，从而恢复了“固有的”正光响应。这为新型光存储器和光电探测器应用开辟了工程半导体纳米线的途径。
We report on individual-InAs nanowire opto-electronic devices which can be tailored to exhibit either, negative or positive photoconductivity (NPC or PPC). The NPC photoresponse time and magnitude is found to be highly tunable by varying the nanowire diameter under controlled growth conditions. Using hysteresis characterization, we decouple the observed photoexcitation-induced hot electton trapping from conventional 'electric field-induced trapping to gain a fundamental insight into the, intetface trap states responsible for NPC. Furthermore, we demonstrate surface, passivation without chemical etching which both enhances the field-effect mobility of the nanowires 'by approximately an order of magnitude and effectively eliminates the hot carrier trapping found to be responsible for NPC, thus restoring an "intrinsic" positive photoresponse. This opens pathways toward engineering semiconductor nanowires for novel optical-memory and photodetector applications.