Ultrasensitive, label-free, and real-time immunodetection using silicon field-effect transistors
Ultrasensitive, label-free, and real-time immunodetection using silicon field-effect transistors
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DOI：
10.1063/1.2779965
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发表时间：
2007-09-03
影响因子：
4
通讯作者：
Lee, Sungjae
中科院分区：
文献类型：
--
作者：
Kim, Ansoon;Ah, Chil Seong;Lee, Sungjae
超灵敏，无标记，和实时前列腺特异性抗原（PSA）传感器的开发使用n型硅单晶为基础的结构配置为场效应晶体管，使用传统的“自上而下”的半导体工艺。PSA与通过共价键固定在Si表面上的PSA的抗体（抗PSA）的特异性结合导致响应于表面处的电场变化的电导率变化。根据PSA的等电点，电导随PSA浓度和溶液pH值的变化提供了实时检测1 fg/ml PSA的证据。作者还探索了PSA免疫检测的灵敏度取决于Si场效应晶体管（FET）的尺寸和掺杂浓度，以提供制造超灵敏Si-FET生物传感器的策略。(C)2007年，美国物理学会。
Ultrasensitive, label-free, and real-time prostate-specific antigen (PSA) sensor was developed using n-type silicon nanowire-based structures configured as field-effect transistors using the conventional "top-down" semiconductor processes. Specific binding of PSA with antibody of PSA (anti-PSA) immobilized on the Si surface through covalent linkage leads to a conductivity change in response to variations of electric field at the surface. The conductance changes depending on PSA concentrations and pH values in solution according to isoelectric point of PSA provide the evidence of the real-time detection of 1 fg/ml PSA. The authors also explored the sensitivity of PSA immunodetection depending on both Si-field-effect transistors (FET) dimensions and doping concentrations to provide strategy for fabrication of an ultrasensitive Si-FET biosensor. (C) 2007 American Institute of Physics.