Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction
Negative Resist for i-Line Lithography Utilizing Acid Catalyzed Silanol-Condensation Reaction
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利用酸催化硅烷醇缩合反应的 i-Line 光刻负抗蚀剂
DOI：
10.1143/jjap.29.2632
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发表时间：
1990
期刊：
影响因子：
--
通讯作者：
T. Iwayanagi
中科院分区：
文献类型：
--
作者：
Nobuaki Hayashi;K. Tadano;Toshihiko Tanaka;H. Shiraishi;T. Ueno;T. Iwayanagi
研究了由novolak树脂、二苯基硅二醇（Ph2Si(OH)2）和酸发生器组成的负极抗蚀剂体系。该抗蚀剂体系中的反应是基于酸催化的缩合反应；暴露区产生的酸在暴露后烘烤过程中诱发Ph2Si(OH)2缩合反应。缩合产物硅氧烷作为水基溶解抑制剂，而未暴露区域的硅醇化合物作为溶解加速剂。由novolak树脂、Ph2Si(OH)2和2-萘甲基-四亚甲基磺酸六氟锑酸盐（NMTMS-SbF6）组成的抗蚀剂在365 nm处的灵敏度约为200 mJ/cm2。该灵敏度低于以三酸三苯磺酸（Ph3S+OTf-）为产酸源时在248 nm处的灵敏度，这可归因于NMTMS-SbF6产酸量子产率低。利用该抗蚀剂，通过将i线步进器与相移掩膜相结合，获得了0.3 μ m的空间图案和1 μ m的膜厚度。
Negative resist systems composed of a novolak resin, diphenylsilanediol (Ph2Si(OH)2) and an acid generator are investigated for i-line lithography. The reaction in this resist system is based on an acid-catalyzed condensation reaction; the acid produced in the exposed area induces a condensation reaction of Ph2Si(OH)2 during post-exposure baking. The condensation product, siloxane, acts as an aqueous-base dissolution inhibitor, while silanol compounds in unexposed areas work as dissolution accelerators. The resist composed of a novolak resin, Ph2Si(OH)2 and 2-naphthoylmethyl-tetramethylenesulfonium hexafluoroantimonate (NMTMS-SbF6) shows a sensitivity of about 200 mJ/cm2 at 365 nm. This sensitivity is lower than that at 248 nm when triphenylsulfonium triflate (Ph3S+OTf-) is used as an acid generator, which can be ascribed to the low quantum yield of acid generation from NMTMS-SbF6. Using this resist, 0.3 µm space patterns with 1 µm film thickness were obtained by combining an i-line stepper with a phase-shifting mask.