High-speed Epitaxial Growth of M-type Strontium Hexaferrite Films on Sapphire using Metal-Organic Chemical Vapor Deposition and Their Magnetic Property
High-speed Epitaxial Growth of M-type Strontium Hexaferrite Films on Sapphire using Metal-Organic Chemical Vapor Deposition and Their Magnetic Property
复制标题
蓝宝石上金属有机化学气相沉积高速外延生长M型六角铁氧体薄膜及其磁性
DOI：
10.1016/j.matlet.2020.128046
复制
发表时间：
2020
影响因子：
3
通讯作者：
A. Ito
中科院分区：
文献类型：
--
作者：
K. Kato;R. Watanuki;A. Ito
使用金属有机化学气相沉积在 C 形切割蓝宝石衬底上演示了 M 型六方锶铁氧体（SrFe 12 O 19；SrM）薄膜的高速外延生长。在1273 K的沉积温度和1.5 kPa的总室压力下获得了c轴取向的SrM薄膜。外延SrM薄膜具有SrM的面内取向关系[1 1-00]|| α-Al 2 O 3 [10 1-0]。外延SrM薄膜表现出14 μm h−1的高沉积速率和80 K时380 emu cm−3的高饱和磁化强度。
High-speed epitaxial growth of M-type strontium hexaferrite (SrFe 12 O 19; SrM) films was demonstrated on a c-cut sapphire substrate using metal–organic chemical vapor deposition. c-axis-oriented SrM films were obtained at a deposition temperature of 1273 K and a total chamber pressure of 1.5 kPa. The epitaxial SrM films had in-plane orientation relationships of SrM [1 1-00]|| α-Al 2 O 3 [10 1-0]. The epitaxial SrM film exhibited both high deposition rate of 14 μm h− 1 and high saturation magnetization value at 80 K of 380 emu cm− 3.